InAlAs/GaAsSb/InP DHBTs grown by Production MBE

We investigate the growth of GaAsSb base DHBTs with InAlAs emitter. The epi materials are grown using 4 x 4” multi-wafer production MBE system fully equipped with real-time in-situ sensors such as absorption band edge spectroscopy (ABES) and optical-based flux monitor (OFM). State-of-the-art hole mobilities are obtained from 100 nm thick carbon-doped GaAsSb. Sb composition variation of less than ± 0.1 atomic percentage across a 4 x 4” platen configuration has been achieved. Large area InAlAs/GaAsSb/InP DHBT device with excellent DC characteristics such as BVCEO > 6 V, and DC current gain of 45 at 1 kA/cm are obtained with 40 nm thick GaAsSb base at 4.5e19 cm doping. These results demonstrate the feasibility of multi-wafer MBE for mass production of GaAsSb based HBTs.